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| SUM50N06-16L New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.016 @ VGS = 10 V 0.022 @ VGS = 4.5 V ID (A) 50 43 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D 12-V Automotive Systems - Load Switch - Motor Drive - DC/DC D TO-263 DRAIN connected to TAB G DS Top View SUM50N06-16L G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 50 35 100 40 80 93b 3.7c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72048 S-22124--Rev. A, 25-Nov-02 www.vishay.com Symbol RthJA RthJC Limit 40 1.6 Unit _C/W 1 SUM50N06-16L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 0.017 50 50 0.013 0.016 0.028 0.036 0.022 S W 60 1.0 2.0 3.0 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.8 W ID ] 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1325 265 115 25 5.5 6.5 10 9 25 7 20 20 50 15 ns 40 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms , m IF = 50 A, VGS = 0 V 1.0 35 2.3 0.04 50 100 1.5 70 4 0.14 A V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72048 S-22124--Rev. A, 25-Nov-02 SUM50N06-16L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 I D - Drain Current (A) 5V I D - Drain Current (A) 80 100 Transfer Characteristics 60 60 40 4V 40 TC = 125_C 20 25_C 0 -55_C 3 4 5 6 20 2 V, 3 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 VGS - Gate-to-Source Voltage (V) Transconductance 70 60 g fs - Transconductance (S) 50 125_C 40 30 20 10 0 0 10 20 30 40 50 60 TC = -55_C 25_C r DS(on) - On-Resistance ( ) 0.03 0.04 On-Resistance vs. Drain Current 0.02 VGS = 4.5 V VGS = 10 V 0.01 0.00 0 20 40 60 80 100 ID - Drain Current (A) 2000 1750 V GS - Gate-to-Source Voltage (V) 1500 1250 1000 750 500 250 0 0 Crss 15 30 45 60 Coss 8 ID - Drain Current (A) 10 VDS = 30 V ID = 40 A Capacitance Gate Charge C - Capacitance (pF) Ciss 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72048 S-22124--Rev. A, 25-Nov-02 www.vishay.com 3 SUM50N06-16L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 2.0 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 80 Drain Source Breakdown vs. Junction Temperature 100 V (BR)DSS (V) IAV (A) @ TA = 25_C I Dav (a) 76 ID = 10 mA 72 10 68 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 64 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72048 S-22124--Rev. A, 25-Nov-02 SUM50N06-16L New Product THERMAL RATINGS Vishay Siliconix 60 50 I D - Drain Current (A) 40 30 20 10 0 0 Drain Current vs. Case Temperature 200 100 Safe Operating Area Limited by rDS(on) 10 ms 100 ms I D - Drain Current (A) 10 1 ms 10 ms 1 TC = 25_C Single Pulse dc, 100 ms 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 72048 S-22124--Rev. A, 25-Nov-02 www.vishay.com 5 |
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